发明名称 Image sensor using a boosted voltage and a method thereof
摘要 An image sensor and method thereof. In an example, the image sensor, may include a pixel array including a plurality of unit pixels, each of the plurality of unit pixels having a charge transfer unit for transferring charges accumulated in an optoelectronic converter to a charge detector via a charge transfer driving signal. The example image sensor may further include a row driving unit generating a boosted voltage, the boosted voltage set to a boosted voltage level higher than a power voltage level, the boosted voltage selectively boosted in response to a boosting voltage variable control signal. The row driving unit may selectively apply the charge transfer driving signal to the pixel array. In another example, the method may include selectively adjusting a voltage level of a charge transfer driving voltage and transferring the charge transfer driving voltage to a charge transfer unit for controlling an operation of the charge transfer unit.
申请公布号 US7397020(B2) 申请公布日期 2008.07.08
申请号 US20060430093 申请日期 2006.05.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 ROH JAE-SEOB
分类号 H01L27/00;H04N3/14;H04N5/374 主分类号 H01L27/00
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