NANO ELECTRODE LINE MANUFACTURING METHOD USING NANO IMPRINT LITHOGRAPHY

摘要

A nano-electrode line manufacturing method using nano-imprint lithography is provided to prevent crosstalk effect by forming a metal layer of a line type independently. A nano-electrode line manufacturing method includes the steps of: forming an insulating layer(2), a first photoresist layer(3), and a second photoresist of drop type on a substrate(1); forming an imprint mold having a plurality of molding patterns on the upper surface of the second photoresist; applying the second photoresist to the mold pattern by pressing the mold; hardening the second photoresist by irradiating the UV light to the mold; removing the mold from the second photoresist; patterning the second photoresist; patterning the first photoresist layer by using the second photoresist as a mask; patterning the insulating layer; and forming a metal layer between the patterned insulating layers.