| 摘要 |
A method for fabricating an isolation layer in a semiconductor device includes providing a substrate, forming a trench over the substrate, forming a liner nitride layer and a liner oxide layer along a surface of the trench, forming an insulation layer having an etch selectivity ratio different from that of the liner oxide layer over the liner oxide layer, forming a spin on dielectric (SOD) oxide layer to fill a portion of the trench over the insulation layer, and forming a high density plasma (HDP) oxide layer for filling the remaining a portion of the trench.
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