| 摘要 |
By performing optical measurements and evaluating the optical response of an appropriately prepared measurement site, stress-related characteristics, such as intrinsic stress of dielectric layers, may be evaluated due to the dependency of the optical response on stress-induced modifications of the charge carrier mobility of a conductive layer provided below the dielectric layer probed by an optical signal. Consequently, inline measurement results may be obtained in a highly efficient manner, thereby providing the potential for monitoring complex stress engineering strategies during a manufacturing sequence for forming microstructure devices.
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