发明名称 PHOTORESIST COMPOSITION AND PATTERN FORMATION METHOD
摘要 <p>Disclosed is a photoresist composition which does not cause any cracking or the like on a resist pattern during plating even when no plasticizer is contained, and which enables to form a resist film having no wrinkling and a uniform film thickness. Specifically disclosed is a photoresist composition comprising: (A) an alkali-soluble novolac resin wherein one or some of hydrogen atoms contained in a phenolic hydroxyl group is/are substituted by a substituent having a structure represented by the general formula (2); and (B) a photosensitizing agent.</p>
申请公布号 WO2008078447(A1) 申请公布日期 2008.07.03
申请号 WO2007JP70368 申请日期 2007.10.18
申请人 TOKYO OHKA KOGYO CO., LTD.;MASUDA, YASUO;ISHIKAWA, KAORU 发明人 MASUDA, YASUO;ISHIKAWA, KAORU
分类号 G03F7/023;G03F7/38;H01L21/027 主分类号 G03F7/023
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