| 摘要 |
<p>A thin film transistor, a method of manufacturing the same, and an organic light emitting diode display device including the same are provided to easily a degree of crystallization by analyzing Raman spectrum peaks of a polycrystalline silicon layer formed by an SGS method. A semiconductor layer(110) made of a polycrystalline silicon layer is formed on a substrate(101), and has a source region, a drain region and a channel region. A gate electrode(130) is formed to correspond to the channel region of the semiconductor layer, and a gate insulating layer(120) is formed between the semiconductor layer and the gate electrode. Source and drain electrodes(142,144) are electrically connected to the source and drain regions of the semiconductor layer, respectively. The polycrystalline silicon layer has plural regions having different Raman spectrum peaks from each other.</p> |
