| 摘要 |
A nonvolatile memory device can include source selection lines, word lines, and a drain selection line formed over a substrate; spacers formed on sidewalls of the source selection lines and the drain selection line; source/drain electrodes having a lightly doped drain structure formed in the substrate; a buffer layer formed over the substrate including over the spacers; and a passivation layer composed of nitrogen gas formed over the buffer layer.
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