METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to suppress a void effect in a process for forming a contact between adjacent gates by removing a spacer before a contact forming process. A gate insulating layer(210) is formed on a semiconductor substrate(200). A first gate electrode(220) is formed on the gate insulating layer. A photoresist layer is conformally formed on the semiconductor substrate including the first gate electrode. An anisotropic etch process for the photoresist layer is performed. A spacer is formed on the first electrode by performing a BCM(Byproduct Capping Mask) process using byproducts generated in the anisotropic etch process. The spacer is removed by performing an SH(Sulpuric Hydroxide) process.