| 摘要 |
A method for fabricating a dual gate oxide layer in a semiconductor device is provided to control the oxidation velocity by using a CWVG(Catalytic Water Vapor Generator) at the temperature of 300°C to 400°C. A method for fabricating a dual gate oxide layer in a semiconductor device comprises the steps of: forming a first gate oxidation layer(300) of first thickness relatively thicker than a first region(110) of a semiconductor substrate(200); and fabricating a second gate oxidation layer(500) of second thickness relatively thinner than a second region(120) of the semiconductor substrate by using a CWVG(Catalytic Water Vapor Generator). The step of fabricating the second gate oxidation layer by using the CWVG is executed at the temperature of 300°C to 400°C. The vapor is generated by combusting oxygen and hydrogen with the platinum as a catalyst. The oxygen and the hydrogen are in the proportion of 1:1. The first region is a cell region and the second region is a periphery circuit region.
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