| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent a bridge between a storage electrode contact and a bitline and improve an insulation property by forming a bitline hard mask layer to have the negative slope. A bitline conductive layer, a bitline hard mask layer are formed above a semiconductor substrate(100). A bitline hard mask layer pattern(104b) is formed by etching thebit line hard mask layer, so that a line width of a lower part of the bitline hard mask layer pattern is smaller than the line width of the upper part thereof. A bitline conductive pattern(104a) which has the same width as the line width of the lower part of the bitline hard mask pattern by etching the bitline conductive layer. A bitline spacer is formed at a sidewall of the bitline conductive pattern and the bitline hard mask layer pattern. An interlayer dielectric(108) is formed on the entire surface, and a storage electrode contact hole is formed by etching the interlayer dielectric selectively. A storage electrode contact spacer(110) is formed at the sidewall of the storage electrode contact hole. A storage electrode contact(112) is formed by filling the storage electrode contact hole with a conductive layer.
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