| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gallium nitride-based semiconductor light emitting diode having high transparency, and at the same time, capable of improving contact resistance between a p-type GaN layer and electrode, and to provide a method for producing the same. <P>SOLUTION: On an upper of a upper clad layer made of p-GaN, an ohmic contact forming layer is formed using MIO, ZIO and CIO (In<SB>2</SB>O<SB>3</SB>including one of Mg, Zn and Cu), and then a transparent electrode layer and a second electrode are formed with ITO thereon, thereby improving the contact resistance between the upper clad layer and the second electrode while obtaining high transparency. <P>COPYRIGHT: (C)2008,JPO&INPIT |
