| 摘要 |
A double patterning process for printing dense lines is provided. In a first step, a first semi dense pattern of lines is printed in a first resist material layer overlaying a substrate provided with a bottom anti-reflection coating. In a second step, a second semi dense pattern of lines is printed in a second resist material layer provided over the cleared area. The first and second semi dense line patterns are positioned in interleaved position, to provide a desired dense pattern of lines and spaces. After development of the first resist material and before providing the second resist material to the substrate, a surface conditioning of the bottom anti-reflection coating is applied to the cleared area between lines of first resist material. The surface conditioning step is arranged to improve adhesion of a feature of second resist material to the surface of the cleared area.
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