| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin-film transistor capable of ensuring a satisfactory source-drain breakdown voltage on a semiconductor thin film, to provide a method of manufacturing the thin-film transistor, and to provide a display device. <P>SOLUTION: The thin-film transistor comprises: the semiconductor thin film 12 provided on an insulating support substrate 10; a gate insulating film 14 provided on the semiconductor thin film 12; a channel region 12C, where a gate electrode layer 16 is formed on the semiconductor thin film 12 via the gate insulating film 14 and the semiconductor thin film 12 is arranged at the lower portion of the gate electrode layer 16; source and drain regions 12S, 12D arranged at both sides of the channel region 12C; and an LDD region 12LD arranged between the channel region 12C and the drain region 12D. The source region 12S has an impurity concentration profile where impurity concentration becomes lower from the interface to the gate insulating film 14 to that to the support substrate 10 in the thickness direction of the semiconductor thin film 12. The impurity concentration near the support substrate is lower by 1/100 to the impurity concentration near the gate insulating film in the impurity profile at the source region. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
