RESISTIVE MEMORY ELEMENT, AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a resistive memory element and its manufacturing method. SOLUTION: This resistive memory element comprises: a contact plug 207 which is formed by passing through an interlayer insulating film 206 on the source 202 or the drain 203 of a transistor; an lower electrode 21 connected to the contact plug 207; a solid solution layer 24 which is formed on the lower electrode 21 with a transition metal solid solution; a resistive layer 22 which is formed on the solid solution layer 24 with a transition metal oxide; and an upper electrode 23 formed on the resistive layer 22. From this structure, a memory element being stable in voltage and resistance characteristics, and having high reliability is provided. COPYRIGHT: (C)2008,JPO&INPIT