发明名称 PROCESSING APPARATUS OF WORKPIECE
摘要 PROBLEM TO BE SOLVED: To control particle generation in a reaction tube, and to produce a high-quality semiconductor device at a high yield. SOLUTION: A sub bypass tube 65 having a sub valve SSV is formed in parallel to a bypass tube 64 for slow evacuation of an evacuation system of a heat treatment apparatus. While evacuating through the bypass tube 65 with the sub valve SSV open, a wafer boat 14 is loaded to / unloaded from a reaction tube 11, to prevent sublimation gases and particles as by-product materials from being adsorbed to a semiconductor substrate 15. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008153695(A) 申请公布日期 2008.07.03
申请号 JP20080056472 申请日期 2008.03.06
申请人 TOKYO ELECTRON LTD 发明人 MATSUURA HIROYUKI;KATO HISASHI
分类号 H01L21/31;C23C16/44 主分类号 H01L21/31
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