| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element for which a dummy electrode is formed so as to prevent increase of the resistance value of the wiring electrode part of a peripheral circuit part, and to provide a manufacturing method of the semiconductor element. SOLUTION: The semiconductor element 10 relating to this invention is provided with an imaging part 12 where a photoelectric conversion part is formed on a semiconductor substrate 11 and the peripheral circuit part 14 formed around the imaging portion 12, where a wiring electrode 16 is formed. The dummy electrode 18 is formed at the peripheral circuit part 14, and the dummy electrode 18 is formed so as to have a long-length dimension along the wiring direction of the wiring electrode 16 at least. COPYRIGHT: (C)2008,JPO&INPIT
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