| 摘要 |
PROBLEM TO BE SOLVED: To form ITO wiring on a glass substrate thicker than an insulating film on the surface of an opposing silicon substrate, and to perform equipotential joint of the ITO wiring and the silicon substrate precisely. SOLUTION: The process for manufacturing an electrostatic actuator comprises the step of forming an SiO<SB>2</SB>layer 41 on the inside of a silicon substrate 1, forming an insulating film 11 on the surface of the silicon substrate where the SiO<SB>2</SB>layer 41 is formed, and forming a silicon substrate equipotential contact recess 24A by etching a surface portion of the silicon substrate 1 corresponding to a glass substrate equipotential contact protrusion 24 on the insulating film side until the SiO<SB>2</SB>layer 41 appears, the step of exposing the silicon substrate 1 by etching a portion of the bottom of the equipotential contact recess 24A, and the step of sticking the silicon substrate 1 and a glass substrate 2, sticking the equipotential contact recess 24A and the equipotential contact protrusion 24, and anode joining the silicon substrate 1 exposed portion of the equipotential contact recess 24A and the equipotential contact protrusion 24 under an electrically conductive clearance state. COPYRIGHT: (C)2008,JPO&INPIT
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