| 摘要 |
PROBLEM TO BE SOLVED: To suppress both of the short channel effect and the gate depletion effect of a semiconductor device. SOLUTION: In a manufacturing method of the semiconductor device, after forming its gate electrode and its sidewall, etc. (steps S1-S5), an SiO<SB>2</SB>film (an HDP oxide film) is so formed by using an HDP-CVD method that the film thickness is made very small on the top surface of its gate electrode and is made large on the surface of its Si substrate (step S6). Thereafter, its whole surface is so subjected to an etch back that the film thickness of the HDP oxide film present on the surface of its Si substrate has a predetermined value and that the HDP oxide film present on the top surface of its gate electrode is removed (step S7). When impurities are implanted into its Si substrate and its gate electrode in this state at the same time (steps S8-S13), they are implanted into its substrate through the HDP oxide film and into its gate electrode directly. Therefore, the impurities are implanted into its Si substrate shallowly and into its gate electrode deeply. Thereby, the semiconductor device wherein both of its short channel effect and its gate depletion effect are suppressed can be formed. COPYRIGHT: (C)2008,JPO&INPIT
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