| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve a small overhead and compensate a variation in threshold voltage of a MOS transistor while a high yield manufacturing can be offered. <P>SOLUTION: A semiconductor integrated circuit Chip includes a CMOS circuit Core for treating an input signal In in an active mode, a control switch Cnt_SW, and a control memory Cnt_MM. The control switch Cnt_SW feeds an N well N_Well of PMOSQp1 of a CMOS circuit, and a P well P_Well of NMOSQn1 with PMOS substrate bias voltage Vbp and NMOS substrate bias voltage Vbn, respectively. The control memory Cnt_MM stores control information Cnt_Sg which shows whether PMOS substrate bias voltage and NMOS substrate bias voltage are supplied from the control switch to the N well of the CMOS circuit, and to the P well of the NMOS in the active mode respectively or not. <P>COPYRIGHT: (C)2008,JPO&INPIT |
