| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming metal wiring of a semiconductor element that selectively vapor-deposits a metal layer having low specific resistance and flattens it after heat treatment by applying chemical vapor deposition only to an upper part of a barrier metal layer inside a trench, thereby being able to form a low specific resistance metal wiring. SOLUTION: Using RF etching method, a barrier metal layer 120 is left only on a bottom face of a trench 108 and on a lower sidewall of an insulating film pattern. Using CVD method that employs an MPA source as a precursor, a metal layer 130 having low specific resistance is selectively vapor-deposited only on an upper part of the barrier metal layer 120, and is flattened to form a metal wiring 140 after heat treatment is carried out. The heat treatment conducts flattening by completely filling the trench 108 with a metal material. This way, dishing and scratching that may be caused by brittle aluminum do not occur and high reliability as the metal wiring 140 can be secured to produce the metal wiring having low specific resistance. COPYRIGHT: (C)2008,JPO&INPIT
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