发明名称 |
Semiconductor memory device capable of controlling drivability of overdriver |
摘要 |
A semiconductor memory device capable of controlling a drivability of an overdriver is provided. The semiconductor memory device includes: a first power supply for supplying a normal driving voltage; a memory cell array block; a bit line sense amplifier block for sensing and amplifying voltage difference between bit line pair of the memory cell array block; a first driver for driving a power supply line of the bit line sense amplifier block to a voltage of a node connected with the first power supply in response to a driving control signal; a plurality of second drivers for driving the node to an overdriving voltage higher than the normal driving voltage; and an overdriving drivability controller for selectively activating the second drivers in response to a test-mode drivability control signal inputted during an activation period of an overdriving signal.
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申请公布号 |
US2008159045(A1) |
申请公布日期 |
2008.07.03 |
申请号 |
US20080073738 |
申请日期 |
2008.03.10 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
JANG JI-EUN |
分类号 |
G11C5/14;G11C7/02;G11C7/08;G11C29/14 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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