SEQUENTIAL MEMORY AND ACCESSING METHOD THEREOF

摘要

A method for accessing a memory sequentially. The memory has (m+1) bit lines and at least one row of transistors, wherein m is a positive integer. This method includes the following steps. First, voltage levels of first and second terminals of the transistors are equalized to a ground voltage in a pre-discharge period. Next, the voltage levels of the first and second terminals of the n^th transistor are respectively transformed into a source voltage and a drain voltage in an n^th reading period, and the voltage level of the second terminal of the (n+₁)^th transistor is transformed into an isolation voltage, wherein n is a positive integer smaller than m. Thereafter, the voltage levels of the first and second terminals of the m^th transistor are respectively transformed into the source voltage and the drain voltage in an m^th reading period. The source voltage equals the ground voltage.