发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
摘要 A semiconductor device includes a semiconductor substrate, a field effect transistor (FET), contact plugs, a resistive element (specific member) and interconnects. Contact plugs are connected to the FET. A resistive element is provided in the layer (lowermost layer of interconnect layer) that also includes the contact plug. The contact plug and the resistive element are formed of the same material. Portions of the upper surface of the resistive element are connected to the interconnects.
申请公布号 US2008160686(A1) 申请公布日期 2008.07.03
申请号 US20070872797 申请日期 2007.10.16
申请人 NEC ELECTRONICS CORPORATION 发明人 NAKAMATSU IKUO;YASUDA MAKOTO;TAKEWAKI TOSHIYUKI;NAKASHIBA YASUTAKA;UCHIDA SHINICHI
分类号 H01L21/8244;H01L21/20;H01L21/4763;H01L21/8238 主分类号 H01L21/8244
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