METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to suppress particles of an oxide layer by removing oxide layers laminated on an EBR(Edge Bead Removal) region and a bevel region. A plurality of oxide layers are formed on an EBR region and a bevel region of a semiconductor substrate(20). The semiconductor substrate is loaded on a cleaning chuck(100). The cleaning chuck is rotated and a cleaning solution is injected onto a rear surface of the semiconductor substrate through a cleaning solution nozzle(30). A nitrogen gas is injected onto the EBR region and the bevel region through an injection unit formed at an upper side of the cleaning chuck so that the cleaning solution is permeated into the EBR region and the bevel region along the rear surface of the semiconductor substrate. The semiconductor substrate is unloaded from the cleaning chuck. A thermal process for the semiconductor substrate is performed.