| 摘要 |
A method of manufacturing a capacitor for preventing a leaning effect is provided to form a supporting layer having a symmetrical structure by removing surface roughness due to a stepped part generated in a storage node electrode manufacturing process. A first supporting layer(23) is formed on an insulating layer(21) including a storage node contact electrode(22). A second supporting layer(24A) as an etch-stop layer is formed on the first insulating layer. The second supporting layer is planarized. A third supporting layer is formed on the second supporting layer. An open region for opening a surface of the storage node contact electrode is formed by etching the third supporting layer, the second supporting layer, and the first supporting layer. A storage node(27) is formed within the opening region. The third supporting layer is removed selectively.
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