| 摘要 |
A semiconductor device and a manufacturing method thereof are provided to protect effectively an element from plasma damage by connecting electrically a forward diode and a backward diode to an electrode of the element. An element includes an electrode which is electrically connected to conductive lines of an upper part. A first diode(D3) is connected in an electrically backward direction to the electrode. A second diode(D4) is connected in an electrically forward direction to the electrode. Both ends of the second diode are connected to the electrode through two conductive lines of different layers. In the process for forming the conductive lines, plasma charges applied to the element through the electrode are erased by using the first diode and the second diode. The electrode and ends of the first and second diodes are commonly connected to the conductive line of the lowest layer.
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