| 摘要 |
<p>A chemically amplified positive resist composition, a resist film formed from the composition, and a method for forming a resist pattern by using the composition are provided to reduce residual film rate and standing wave phenomena and to improve profile and resolution. A chemically amplified positive resist composition comprises a resin represented by the formula 1; a photoacid generator represented by the formula 2, 3 or 4 or their mixture; and a quencher, wherein R1 is H or a methyl group; R2 is a C1-C10 linear, branched or cyclic alkyl group; a+b is 1; 0.50<=a/(a+b)<=0.90; and 0.1<=b/(a+b)<=0.50; X is a halogen atom; R3 is a halogen atom or a C1-C10 linear, branched or cyclic haloalkyl group; and R4 and R5 are a C3-C8 linear, branched or cyclic alkyl group substituted or unsubstituted with a hydroxyl group, an amino group, an alkoxy group or an aryl group, or a C6-C20 aryl group substituted or unsubstituted with a hydroxyl group, an amino group, an alkoxy group or an aryl group.</p> |
