METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH LANDING PLUG CONTACT

摘要

A manufacturing method of a semiconductor device having a landing plug contact is provided to prevent SAC(Self Aligned Contact) fail and not-open of a contact hole by leaving lots of remaining nitride layers. A manufacturing method of a semiconductor device includes the processes of: forming plural line patterns; forming an interlayer dielectric(24) for gap-filling the line patterns; etching the interlayer dielectric in the SAC method; forming a buffer layer(28B) on the entire structure, after etching the interlayer dielectric; forming an etch barrier layer(29A) on the buffer layer; and exposing a gap of line patterns by etching the etch barrier layer and the buffer layer at the same time.