| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent loss of a hard mask layer and disconnection between gate electrodes by forming a metal material layer having high etch selectivity between silicon nitride layers used as a hard mask of a gate electrode. A gate conduction layer(22) is formed on a substrate(10). A first hard mask(31) is formed on the gate conduction layer. A second hard mask(32) having an etch ratio different from the etch ratio of the first hard mask is formed on the first hard mask. A third hard mask(33) having an etch ratio different from the etch ratio of the second hard mask is formed on the second hard mask. A hard mask pattern(30) is formed by etching the first, second, and third hard masks. A gate electrode(20) is formed by etching the gate conduction layer by using the hard mask pattern as an etch mask.
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