| 摘要 |
<p>A method for manufacturing a pattern of a semiconductor device is provided to decrease ID(Isolation Dense) bias by using a tungsten film or a tungsten silicide layer as a sacrifice hard mask. An etched layer is formed on a semiconductor substrate(11) comprising a cell region and a peripheral circuit region. A tungsten film(15) or a tungsten silicide layer for a sacrifice hard mask are formed on the etched layer. A first photoresist pattern is formed on the tungsten film or the tungsten silicide layer. The tungsten film or the tungsten silicide layer is etched first by using the first photoresist pattern as the mask. A second photoresist pattern is formed on the tungsten film or the tungsten silicide layer. The tungsten film or the tungsten silicide layer is etched secondarily by using the second photoresist pattern as the mask. An etched layer pattern is formed by the etched layer.</p> |
