SEMICONDUCTOR DEVICE HAVING BIT LINE LANDING PAD AND BORDERLESS CONTACT ON BIT LINE STUD HAVING ETCH BLOCKING LAYER AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A semiconductor device having a bit line landing pad and a borderless contact on a bit line stud having an etch stop layer is provided to guarantee precision of an etch depth, by forming the etch stop layer on the stud of a lower layer such that the etch stop layer has etch selectively different from that of a lower insulation layer. CONSTITUTION: The first stud is formed in the first insulation layer(58). The etch stop layer(68) is formed on the first stud. The second insulation layer is formed on the etch stop layer. The second stud passes through the second insulation layer and the etch stop layer, electrically connected to the first stud. The etch stop layer has a different etch selectivity from that of the second insulation layer.