METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to secure the high drive current of a PMOS transistor by increasing mobility of hole in the PMOS transistor. A first and second gate electrodes are formed on a substrate(10) including a PMOS region and an NMOS region. A spacer insulating layer(17) is formed on the substrate including the first and second gate electrodes. A spacer(17A) is formed at both sidewalls of the first gate electrode by etching the spacer insulating layer of the PMOS region. A recess part is formed by etching the substrate of the PMOS region exposed from both sides of the spacer. A strained induction layer(21) is formed to bury the recess part. A spacer is formed on both sidewalls of the second gate electrode by etching the spacer insulating layer of the PMOS region. A tensile stress layer(24) is formed along a stepped part of an upper surface of the substrate including the spacer and the strained induction layer.