| 摘要 |
A flash memory device and an erase method thereof are provided to improve erase/write recycling characteristics of a memory cell as reducing erase operation time, by performing erase operation of ISPE(Incremental Stepping Pulse Erase) type or DSPE(Decreasing Stepping Pulse Erase) type. A number of memory cell blocks include memory cells connected to a number of word lines. An operation voltage generation part(330) applies an erase operation voltage to a selected memory cell block during erase operation, and changes the level of the erase operation voltage according to the result of the erase operation. A controller(370) controls the operation voltage generation part in order for an erase operation voltage with the same level as the last erase operation voltage applied when the erase operation is completed normally to be applied as an initial erase operation voltage in new erase operation. An X-decoder(340) generates a block selection signal according to an address signal in order to select one block among a number of memory cell blocks. A switching part(350) transfers the erase operation voltage to the selected memory cell block according to the block selection signal.
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