发明名称 |
Dual direction ESD clamp based on snapback NMOS cell with embedded SCR |
摘要 |
In an ESD protection structure, dual direction ESD protection is provided by forming an n-well isolation ring around an NMOS device so that the p-well in which the NMOS drain is formed is isolated from the underlying p-substrate by the n-well isolation ring. By forming the n-well isolation ring the p-n-p-n structure of an embedded SCR for reverse ESD protection is provided. The width of the n-well isolation ring and its spacing from the NMOS drain are adjusted to provide the desired SCR parameters.
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申请公布号 |
US7394133(B1) |
申请公布日期 |
2008.07.01 |
申请号 |
US20050216774 |
申请日期 |
2005.08.31 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
VASHCHENKO VLADISLAV;HOPPER PETER J.;LINDORFER PHILIPP |
分类号 |
H01L29/72 |
主分类号 |
H01L29/72 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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