| 摘要 |
FIELD: physics. ^ SUBSTANCE: invention is related to microelectronics and may be used in production of integral microchips on active and passive wafers and elements of diffraction optics on curvilinear surfaces. Focuser of gas-discharge plasma contains cathode, meshed anode, insulation and high-voltage bushing. Cathode and mesh anode are arranged with curvature equal to curvature of processed item surface, and are installed at the distance of 15lambda50lambda, where lambda - length of free electron range in gas-discharge plasma flux. ^ EFFECT: creation of plasma flux for processing of curvilinear surfaces. ^ 1 dwg |
