发明名称 POSITIVE RESIST COMPOSITION FOR LIQUID IMMERSION EXPOSURE AND METHOD OF FORMING RESIST PATTERN
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive resist composition for liquid immersion exposure that can form a resist film having a high surface hydrophobicity and excelling in lithography performance, and a method of forming a resist pattern. <P>SOLUTION: The positive resist composition for liquid immersion exposure comprises (A) resin component whose alkali solubility is increased by the action of an acid; (B) acid generator component capable of generating an acid when exposed to light; and (C) resin component containing a fluorine atom but not having any acid dissociative group, wherein the resin component (A) contains (A1) resin having (a) constituent unit derived from acrylic acid but not containing a fluorine atom, and wherein the resin component (C) contains (C1) noncircular-principal chain resin and (C2) circular-principal-chain resin. The method of forming a resist pattern includes a step of forming a resist film on a support using the resist composition; a step of subjecting the resist film to liquid immersion exposure; and a step of forming a resist pattern by developing the resist film. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008145667(A) 申请公布日期 2008.06.26
申请号 JP20060331780 申请日期 2006.12.08
申请人 TOKYO OHKA KOGYO CO LTD 发明人 UCHIUMI YOSHIYUKI;YOSHII YASUHIRO;NAKAMURA TAKESHI;IRIE MAKIKO
分类号 G03F7/039;H01L21/027 主分类号 G03F7/039
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