发明名称 High temperature photonic structure for tungstein filament
摘要 The invention is directed to a process for the creation of a photonic lattice on the surface of an emissive substrate comprising first depositing a thin film metal layer on at least one surface of the substrate, the thin film metal comprising a metal having a melting point lower than the melting point of the substrate, then annealing the thin film metal layer and the substrate to create nano-particles on the substrate surface, and anodizing or plasma etching the annealed thin film metal and substrate to create pores in the nano-particles and the substrate such that upon exposure to high temperature the emissivity of the substrate is refocused to generate emissions in the visible and lower infrared region and to substantially eliminate higher infrared emission, and to the substrate thus created.
申请公布号 US2008152943(A1) 申请公布日期 2008.06.26
申请号 US20060642193 申请日期 2006.12.20
申请人 AURONGZEB DEEDER M 发明人 AURONGZEB DEEDER M.
分类号 B32B15/00;B05D3/00;B05D3/14;B32B5/18;C23C14/14;H01J1/00;H01J17/26 主分类号 B32B15/00
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