| 摘要 |
<p>A semiconductor package and a manufacturing method thereof are provided to reduce a height and a thickness thereof by removing a substrate from the semiconductor package. A bottom layer(132) includes a terminal hole(134) for connecting an inside and an outside thereof to each other. A metal electrode(114) is formed on the bottom layer. The metal electrode includes an exposed lower part corresponding to the terminal hole. One or more chip component(120) is mounted on the metal electrode. A mold member(130) is formed on the bottom layer in order to protect the chip component. The bottom layer has a thickness of 10-50 micrometers. A conductive land or a conductive ball is formed at the metal electrode exposed by the terminal hole of the bottom layer.</p> |
