发明名称 |
SEMICONDUCTOR DEVICE, DATA WRITING METHOD OF SEMICONDUCTOR DEVICE, AND DATA READING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent a deterioration of each element in a semiconductor device which writes data by giving a high load to the memory elements to cause a chemical reaction, by lightening a load imposed on circuit elements and memory elements, which is caused by applying a load. <P>SOLUTION: Such a control is made in a memory section 103 that the data same as the input data are written as memory data when the memory data of an address just before are in a first load condition, and the input data are reversed and written as the memory data when the memory data of the address just before are in a second load condition applying a voltage higher than that of the first load condition. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
申请公布号 |
JP2008146814(A) |
申请公布日期 |
2008.06.26 |
申请号 |
JP20070294260 |
申请日期 |
2007.11.13 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
ITO MASANORI |
分类号 |
G11C13/00;H01L21/8242;H01L21/8247;H01L27/10;H01L27/105;H01L27/108;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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