| 摘要 |
<p>A method for manufacturing a flash memory device is provided to stabilize program and erase characteristics of an SONOS device by reducing dangling bands, interface states, shallow traps, and defects at the junction boundary of a trap nitride layer and a block oxide layer. A method for manufacturing a flash memory device includes: sequentially forming a tunnel oxide layer(110) and a trap nitride layer(120) on a semiconductor substrate(100); oxidizing a surface of the tunnel oxide layer to form an oxide layer(130) on the surface; forming a block oxide layer on the oxide layer; forming a conductive material on the block oxide layer and selectively removing the conductive material, the block oxide layer, the oxide layer, the trap nitride layer, and the tunnel oxide layer to form a gate electrode; and forming source/drain impurity regions in a surface of the semiconductor substrate at both sides of the gate electrode.</p> |
