发明名称 SOLID-STATE IMAGING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To prevent increase of area and deterioration of transfer efficiency of a solid-state imaging apparatus. <P>SOLUTION: The solid-state imaging apparatus concerning the present invention has: a pixel sequence in which a plurality of light receiving elements for photoelectrically converting incident light are arranged in the direction of electric charge transfer; a first electric charge transfer part and a second electric charge transfer part which are arranged on both sides via the pixel sequence to transfer signal electric charges input from the pixel sequence in the electric charge transfer direction; first floating diffusion connected to the first electric charge transfer part to perform voltage conversion of electric charges input from the first electric charge transfer part; second floating diffusion connected to the second electric charge transfer part to perform voltage conversion of electric charges input from the second electric charge transfer part; wiring for connecting the first floating diffusion with the second floating diffusion; a single output circuit 6 connected to the wiring; and a reset transistor which initializes potentials of the first floating diffusion and the second floating diffusion. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008148083(A) 申请公布日期 2008.06.26
申请号 JP20060334041 申请日期 2006.12.12
申请人 NEC ELECTRONICS CORP 发明人 KAMIMURA SEI
分类号 H01L27/148;H04N1/028;H04N5/335;H04N5/369;H04N5/372 主分类号 H01L27/148
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