| 摘要 |
In a rework process for removing an organic film containing silicon formed on a semiconductor wafer substrate, silicon compound residues were generated, and it was difficult to remove them. In the present invention, the semiconductor wafer is processed by the method comprising at least: a first step of cleaning treatment, using an ammonia aqueous solution, of a surface exposed by removing an organic film containing silicon formed on the semiconductor wafer substrate; and a second step of cleaning treatment, using a diluted fluorinated acid aqueous solution. The ammonia concentration of the ammonia aqueous solution is preferably equal to or more than 0.01 weight percent and equal to or less than 30 weight percent. The fluorinated acid concentration of the diluted fluorinated acid aqueous solution is preferably equal to or more than 0.01 weight percent and equal to or less than 2.0 weight percent.
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