LIGHT EMITTING DIODE AND LASER DIODE USING N-FACE GAN, INN, AND AIN AND THEIR ALLOYS

摘要

The present invention allows the growth of InGaN with greater compositions of Indium than traditionally available now, which pushes LED and LD wavelengths into the yellow and red portions of the color spectrum. The ability to grow with Indium at higher temperatures leads to a higher quality AlInGaN. This also allows for novel polarization-based band structure designs to create more efficient devices. Additionally, it allows the fabrication of p-GaN layers with increased conductivity, which improves device performance.