| 摘要 |
The invention relates to a method for manufacturing an SOI substrate, associating silicon based areas and areas of GaAs based material at the thin layer of the SOI substrate, the SOI substrate comprising a silicon support supporting successively a layer of dielectric material and a thin layer of silicon. The method comprises the following steps: supply of a SOI substrate comprising a silicon support mismatched by an angle of between 2° and 10° inclusive, the thin silicon based layer being oriented parallel to the plane (001) or (010), or (100) or (110) or (101) or (011) or (111), preservation of at least one area of the thin silicon layer, elimination of at least one non-preserved area of the thin silicon layer until the layer of dielectric material is revealed, opening, in said non-preserved area, of the layer of dielectric material until the silicon support is revealed, growth, from the silicon of the support revealed by said opening and by liquid phase epitaxy or by lateral epitaxy, of mismatched germanium on the layer of dielectric material revealed, growth of GaAs based material from the mismatched germanium obtained in the preceding step.
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