摘要 |
Methods and associated structures of forming a microelectronic device are described. Those methods may comprise forming a conductive layer on a single crystal ferroelectric material, patterning the conductive layer to form contacts, attaching a portion of a circuit on the patterned conductive layer, lapping the single crystal ferroelectric material to a thickness of about 1 to about 10 microns and then etching the single crystal to a thickness below about 25 nm.
|