| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a verification method for mask manufacture errors in multi-exposure techniques by which accuracy of a photomask itself and superposition accuracy of a semiconductor exposure device can individually and independently be observed respectively and mask manufacturing errors can be verified without using a hard mask process environment. <P>SOLUTION: The verification method for mask manufacture errors in multi-exposure techniques for multi-patterning using a plurality of photomasks comprises: obtaining exposure images by exposure using a plurality of photomasks (1, 2) having global position accuracy detection marks in non-drawing regions and a plurality of photomasks (1, 2) having local position accuracy detection marks in drawing regions; observing the superposition state of exposure images by the global position accuracy detection marks and the superposition state of exposure images by the local position accuracy detection marks; and verifying the superposition accuracy of the photomasks and superposition accuracy of the semiconductor exposure device. <P>COPYRIGHT: (C)2008,JPO&INPIT |
