SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To improve the mobilities in an nMISFET and a pMISFET without tilting the directions of these elements. SOLUTION: In this semiconductor device, the n-channel MIS transistor and the p-channel MIS transistor are formed in the semiconductor layers on an insulator. The channel of the n-channel MIS transistor is formed of an Si layer 10 having a uniaxial tensile strain in the channel length direction, the channel of the p-channel MIS transistor is formed of SiGe 20 or a Ge layer having a uniaxial compressive strain in the channel length direction, and both of the current directions of respective transistors are the [110] direction. COPYRIGHT: (C)2008,JPO&INPIT