发明名称 |
Gate oxide film structure for a solid state image pick-up device |
摘要 |
In a solid-state image pick-up device in which a photoelectric converting section formed on a semiconductor substrate and a gate oxide film of a transfer path of a charge coupled device (CCD) which is close to the photoelectric converting section are constituted by a laminated film comprising a silicon oxide film (SiO) and a silicon nitride film (SiN), the gas oxide film has a single layer structure in which at least an end on the photoelectric converting section side of the gate oxide film does not contain the silicon nitride film.
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申请公布号 |
US2008153197(A1) |
申请公布日期 |
2008.06.26 |
申请号 |
US20080071241 |
申请日期 |
2008.02.19 |
申请人 |
FUJIFILM CORPORATION |
发明人 |
OKAMOTO EIICHI;TANAKA SHUNSUKE;UYA SHINJI |
分类号 |
H01L21/44;H01L21/00;H01L21/336;H01L27/148;H01L29/768;H01L47/00 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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