| 摘要 |
A method for fabricating a CMOS image sensor according to an embodiment includes: forming an interlayer dielectric layer over a metal wiring on a semiconductor substrate; forming a capping layer on the interlayer dielectric layer; forming a hard mask layer on the capping layer; forming a contact hole by selectively removing the hard mask layer, the capping layer, and the interlayer dielectric layer so that predetermined portions of the metal wiring and the surface of the semiconductor substrate are exposed; and forming a tungsten plug inside the contact hole by depositing a tungsten film over the contact hole and the semiconductor substrate and performing a CMP process.
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