发明名称 |
Multi-level cell memory devices and methods of storing data in and reading data from the memory devices |
摘要 |
A multi-level cell (MLC) memory device may include 'a' number of m-bit MLC memory cells; an encoder that encodes 'k' bits of data at a code rate of k/n to generate an encoded bit stream; and a signal mapping module that applies pulses to the MLC memory cells in order to write the encoded bit stream in the MLC memory cells. In the device, 'a' and 'm' may be integers greater than or equal to 2, 'k' and 'n' may be integers greater than or equal to 1, and 'n' may be greater than 'k'. A method of storing data in the device may include encoding 'k' bits of data at a code rate of k/n to generate an encoded bit stream. A method of reading data from the device may include decoding 'n' bits of data at a code rate of n/k to generate a decoded bit stream.
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申请公布号 |
US2008151621(A1) |
申请公布日期 |
2008.06.26 |
申请号 |
US20070802656 |
申请日期 |
2007.05.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KONG JUN JIN;PARK SUNG CHUNG;KANG DONG KU;LEE YOUNG HWAN;HONG SI HOON;HYUN JAE WOONG |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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